High-performance MIM capacitors using HfLaO-based dielectrics

• Main Authors: Zhang, L., He, W., Chan, D.S.H., Cho, B.J.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Hafnium oxide; High-ê dielectric; Lanthanum oxide; Metal'insulator'metal (MIM); Multilayer dielectric structure
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82466
• Institution: National University of Singapore

10.1109/LED.2009.2034545