Hot-carrier effects in strained n-channel transistor with silicon-carbon (Si1-yCy) source/drain stressors and its orientation dependence

10.1109/LED.2007.906933

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Bibliographic Details
Main Authors:	Ang, K.-W., Wan, C., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Channel orientation Hot-carrier effects Silicon-carbon(Si1-yCy) Strain
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82475
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82475
record_format	dspace
spelling	sg-nus-scholar.10635-824752024-11-09T07:32:16Z Hot-carrier effects in strained n-channel transistor with silicon-carbon (Si1-yCy) source/drain stressors and its orientation dependence Ang, K.-W. Wan, C. Balasubramanian, N. Samudra, G.S. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Channel orientation Hot-carrier effects Silicon-carbon(Si1-yCy) Strain 10.1109/LED.2007.906933 IEEE Electron Device Letters 28 11 996-999 EDLED 2014-10-07T04:29:50Z 2014-10-07T04:29:50Z 2007-11 Article Ang, K.-W., Wan, C., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C. (2007-11). Hot-carrier effects in strained n-channel transistor with silicon-carbon (Si1-yCy) source/drain stressors and its orientation dependence. IEEE Electron Device Letters 28 (11) : 996-999. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.906933 07413106 http://scholarbank.nus.edu.sg/handle/10635/82475 000250524200020 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Channel orientation Hot-carrier effects Silicon-carbon(Si1-yCy) Strain
spellingShingle	Channel orientation Hot-carrier effects Silicon-carbon(Si1-yCy) Strain Ang, K.-W. Wan, C. Balasubramanian, N. Samudra, G.S. Yeo, Y.-C. Hot-carrier effects in strained n-channel transistor with silicon-carbon (Si1-yCy) source/drain stressors and its orientation dependence
description	10.1109/LED.2007.906933
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Ang, K.-W. Wan, C. Balasubramanian, N. Samudra, G.S. Yeo, Y.-C.
format	Article
author	Ang, K.-W. Wan, C. Balasubramanian, N. Samudra, G.S. Yeo, Y.-C.
author_sort	Ang, K.-W.
title	Hot-carrier effects in strained n-channel transistor with silicon-carbon (Si1-yCy) source/drain stressors and its orientation dependence
title_short	Hot-carrier effects in strained n-channel transistor with silicon-carbon (Si1-yCy) source/drain stressors and its orientation dependence
title_full	Hot-carrier effects in strained n-channel transistor with silicon-carbon (Si1-yCy) source/drain stressors and its orientation dependence
title_fullStr	Hot-carrier effects in strained n-channel transistor with silicon-carbon (Si1-yCy) source/drain stressors and its orientation dependence
title_full_unstemmed	Hot-carrier effects in strained n-channel transistor with silicon-carbon (Si1-yCy) source/drain stressors and its orientation dependence
title_sort	hot-carrier effects in strained n-channel transistor with silicon-carbon (si1-ycy) source/drain stressors and its orientation dependence
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82475
_version_	1821192823077076992

Hot-carrier effects in strained n-channel transistor with silicon-carbon (Si1-yCy) source/drain stressors and its orientation dependence

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