Hot-carrier effects in strained n-channel transistor with silicon-carbon (Si1-yCy) source/drain stressors and its orientation dependence

Hot-carrier effects in strained n-channel transistor with silicon-carbon (Si1-yCy) source/drain stressors and its orientation dependence

10.1109/LED.2007.906933

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Bibliographic Details
Main Authors: Ang, K.-W., Wan, C., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Channel orientation
Hot-carrier effects
Silicon-carbon(Si1-yCy)
Strain
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82475
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Institution: National University of Singapore

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