Hot-electron capture for CHEI programming in SONOS-type flash memory using high- κ trapping layer

10.1109/TED.2008.922854

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Bibliographic Details
Main Authors:	Zhang, G., Yoo, W.J., Ling, C.-H.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Channel hot-electron injection (CHEI) High-κ Hot-electron capture Polysilicon-oxide-nitride-oxide-silicon (SONOS) Flash memory
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82476
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82476
record_format	dspace
spelling	sg-nus-scholar.10635-824762023-10-26T20:53:44Z Hot-electron capture for CHEI programming in SONOS-type flash memory using high- κ trapping layer Zhang, G. Yoo, W.J. Ling, C.-H. ELECTRICAL & COMPUTER ENGINEERING Channel hot-electron injection (CHEI) High-κ Hot-electron capture Polysilicon-oxide-nitride-oxide-silicon (SONOS) Flash memory 10.1109/TED.2008.922854 IEEE Transactions on Electron Devices 55 6 1502-1510 IETDA 2014-10-07T04:29:51Z 2014-10-07T04:29:51Z 2008-06 Article Zhang, G., Yoo, W.J., Ling, C.-H. (2008-06). Hot-electron capture for CHEI programming in SONOS-type flash memory using high- κ trapping layer. IEEE Transactions on Electron Devices 55 (6) : 1502-1510. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2008.922854 00189383 http://scholarbank.nus.edu.sg/handle/10635/82476 000256155600030 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Channel hot-electron injection (CHEI) High-κ Hot-electron capture Polysilicon-oxide-nitride-oxide-silicon (SONOS) Flash memory
spellingShingle	Channel hot-electron injection (CHEI) High-κ Hot-electron capture Polysilicon-oxide-nitride-oxide-silicon (SONOS) Flash memory Zhang, G. Yoo, W.J. Ling, C.-H. Hot-electron capture for CHEI programming in SONOS-type flash memory using high- κ trapping layer
description	10.1109/TED.2008.922854
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Zhang, G. Yoo, W.J. Ling, C.-H.
format	Article
author	Zhang, G. Yoo, W.J. Ling, C.-H.
author_sort	Zhang, G.
title	Hot-electron capture for CHEI programming in SONOS-type flash memory using high- κ trapping layer
title_short	Hot-electron capture for CHEI programming in SONOS-type flash memory using high- κ trapping layer
title_full	Hot-electron capture for CHEI programming in SONOS-type flash memory using high- κ trapping layer
title_fullStr	Hot-electron capture for CHEI programming in SONOS-type flash memory using high- κ trapping layer
title_full_unstemmed	Hot-electron capture for CHEI programming in SONOS-type flash memory using high- κ trapping layer
title_sort	hot-electron capture for chei programming in sonos-type flash memory using high- κ trapping layer
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82476
_version_	1781784147461668864

Hot-electron capture for CHEI programming in SONOS-type flash memory using high- κ trapping layer

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