Hot-electron capture for CHEI programming in SONOS-type flash memory using high- κ trapping layer

Hot-electron capture for CHEI programming in SONOS-type flash memory using high- κ trapping layer

10.1109/TED.2008.922854

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Bibliographic Details
Main Authors: Zhang, G., Yoo, W.J., Ling, C.-H.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Channel hot-electron injection (CHEI)
High-κ
Hot-electron capture
Polysilicon-oxide-nitride-oxide-silicon (SONOS) Flash memory
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82476
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/82476

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