In0.53Ga0.47As FinFETs with self-aligned molybdenum contacts and HfO2/Al2O3 gate dielectric
10.1016/j.sse.2013.02.009
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2014
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sg-nus-scholar.10635-825252023-10-27T08:38:10Z In0.53Ga0.47As FinFETs with self-aligned molybdenum contacts and HfO2/Al2O3 gate dielectric Zhang, X. Guo, H.X. Zhu, Z. Gong, X. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Contact Gate dielectric Indium gallium arsenide Multiple-gate transistors 10.1016/j.sse.2013.02.009 Solid-State Electronics 84 83-89 SSELA 2014-10-07T04:30:25Z 2014-10-07T04:30:25Z 2013 Article Zhang, X., Guo, H.X., Zhu, Z., Gong, X., Yeo, Y.-C. (2013). In0.53Ga0.47As FinFETs with self-aligned molybdenum contacts and HfO2/Al2O3 gate dielectric. Solid-State Electronics 84 : 83-89. ScholarBank@NUS Repository. https://doi.org/10.1016/j.sse.2013.02.009 00381101 http://scholarbank.nus.edu.sg/handle/10635/82525 000319547100012 Scopus |
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National University of Singapore |
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NUS Library |
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Asia |
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Singapore Singapore |
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NUS Library |
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ScholarBank@NUS |
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Contact Gate dielectric Indium gallium arsenide Multiple-gate transistors |
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Contact Gate dielectric Indium gallium arsenide Multiple-gate transistors Zhang, X. Guo, H.X. Zhu, Z. Gong, X. Yeo, Y.-C. In0.53Ga0.47As FinFETs with self-aligned molybdenum contacts and HfO2/Al2O3 gate dielectric |
| description |
10.1016/j.sse.2013.02.009 |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Zhang, X. Guo, H.X. Zhu, Z. Gong, X. Yeo, Y.-C. |
| format |
Article |
| author |
Zhang, X. Guo, H.X. Zhu, Z. Gong, X. Yeo, Y.-C. |
| author_sort |
Zhang, X. |
| title |
In0.53Ga0.47As FinFETs with self-aligned molybdenum contacts and HfO2/Al2O3 gate dielectric |
| title_short |
In0.53Ga0.47As FinFETs with self-aligned molybdenum contacts and HfO2/Al2O3 gate dielectric |
| title_full |
In0.53Ga0.47As FinFETs with self-aligned molybdenum contacts and HfO2/Al2O3 gate dielectric |
| title_fullStr |
In0.53Ga0.47As FinFETs with self-aligned molybdenum contacts and HfO2/Al2O3 gate dielectric |
| title_full_unstemmed |
In0.53Ga0.47As FinFETs with self-aligned molybdenum contacts and HfO2/Al2O3 gate dielectric |
| title_sort |
in0.53ga0.47as finfets with self-aligned molybdenum contacts and hfo2/al2o3 gate dielectric |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/82525 |
| _version_ |
1781784162113421312 |