In0.53Ga0.47As FinFETs with self-aligned molybdenum contacts and HfO2/Al2O3 gate dielectric
10.1016/j.sse.2013.02.009
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Main Authors: | Zhang, X., Guo, H.X., Zhu, Z., Gong, X., Yeo, Y.-C. |
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Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
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Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/82525 |
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Institution: | National University of Singapore |
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