In0.53Ga0.47As FinFETs with self-aligned molybdenum contacts and HfO2/Al2O3 gate dielectric

10.1016/j.sse.2013.02.009

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Bibliographic Details
Main Authors: Zhang, X., Guo, H.X., Zhu, Z., Gong, X., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
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Online Access:http://scholarbank.nus.edu.sg/handle/10635/82525
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Institution: National University of Singapore

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