Influence of substrate misorientation on vibrational properties of In 1-x-yGa xAl yAs grown on InP
10.1116/1.1633567
Saved in:
Main Authors: | Tripathy, S., Thwin-Htoo, Chua, S.J. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/82540 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Strong interaction of Fermi-edge singularity and exciton related to N=2 subband in a modulation-doped Alx-Ga1-xAs/InyGa1-yAs/GaAs quantum well
by: Xu, S.J., et al.
Published: (2014) -
Optical and x-ray diffraction characterization of MBE-grown InGaAs, InAIAs and InGaAIAs on InP
by: Feng, Z.C., et al.
Published: (2014) -
Band structure of Mg1-xZnxSySe1-y epitaxially grown on GaAs
by: Guo, Q., et al.
Published: (2014) -
Effect of strain in In1-x-yAlyGaxAs/In0.523Al 0.477As QW system on InP substrate
by: Vaya, P.R., et al.
Published: (2014) -
Molecular-beam epitaxy of high quality lattice matched In1-x-yGaxAlyAs epitaxial layers on InP substrates
by: Chua, S.J., et al.
Published: (2014)