Interface traps at high doping drain extension region in sub-0.25-μm MOSTs

• Main Authors: Chen, G., Li, M.F., Yu, X.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: CMOSFETs; Hot carriers; Reliability; Semiconductor-insulator interfaces; Tunneling
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82558
• Institution: National University of Singapore

10.1109/55.919239