Junctionless II-gate transistor with indium gallium arsenide channel

10.1049/el.2012.4535

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Bibliographic Details
Main Authors:	Guo, H.X., Zhang, X., Zhu, Z., Kong, E.Y.J., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82595
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Institution:	National University of Singapore

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