Localized oxide degradation in ultrathin gate dielectric and its statistical analysis

Localized oxide degradation in ultrathin gate dielectric and its statistical analysis

10.1109/TED.2003.812105

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Bibliographic Details
Main Authors: Loh, W.Y., Cho, B.J., Li, M.F., Chan, D.S.H., Ang, C.H., Zheng, J.Z., Kwong, D.L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Gate leakage current
Oxide degradation
Reliability
Tunneling
Ultrathin gate oxide
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82623
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Institution: National University of Singapore
Description
Summary:10.1109/TED.2003.812105

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