Localized oxide degradation in ultrathin gate dielectric and its statistical analysis

• Main Authors: Loh, W.Y., Cho, B.J., Li, M.F., Chan, D.S.H., Ang, C.H., Zheng, J.Z., Kwong, D.L.
• 其他作者: ELECTRICAL & COMPUTER ENGINEERING
• 格式: Article
• 出版: 2014
• 主題: Gate leakage current; Oxide degradation; Reliability; Tunneling; Ultrathin gate oxide
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/82623

10.1109/TED.2003.812105