MIM capacitors using atomic-layer-deposited high-κ (HfO2)1-x(Al2O3)x dielectrics

10.1109/LED.2002.807703

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Bibliographic Details
Main Authors:	Hu, H., Zhu, C., Yu, X., Chin, A., Li, M.F., Cho, B.J., Kwong, D.-L., Foo, P.D., Yu, M.B., Liu, X., Winkler, J.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Dispersion High-κ Metal-insulator-metal (MIM) capacitor Thin-film devices Voltage linearity
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82701
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82701
record_format	dspace
spelling	sg-nus-scholar.10635-827012023-10-30T08:01:39Z MIM capacitors using atomic-layer-deposited high-κ (HfO2)1-x(Al2O3)x dielectrics Hu, H. Zhu, C. Yu, X. Chin, A. Li, M.F. Cho, B.J. Kwong, D.-L. Foo, P.D. Yu, M.B. Liu, X. Winkler, J. ELECTRICAL & COMPUTER ENGINEERING Dispersion High-κ Metal-insulator-metal (MIM) capacitor Thin-film devices Voltage linearity 10.1109/LED.2002.807703 IEEE Electron Device Letters 24 2 60-62 EDLED 2014-10-07T04:32:29Z 2014-10-07T04:32:29Z 2003-02 Article Hu, H., Zhu, C., Yu, X., Chin, A., Li, M.F., Cho, B.J., Kwong, D.-L., Foo, P.D., Yu, M.B., Liu, X., Winkler, J. (2003-02). MIM capacitors using atomic-layer-deposited high-κ (HfO2)1-x(Al2O3)x dielectrics. IEEE Electron Device Letters 24 (2) : 60-62. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2002.807703 07413106 http://scholarbank.nus.edu.sg/handle/10635/82701 000182516600003 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Dispersion High-κ Metal-insulator-metal (MIM) capacitor Thin-film devices Voltage linearity
spellingShingle	Dispersion High-κ Metal-insulator-metal (MIM) capacitor Thin-film devices Voltage linearity Hu, H. Zhu, C. Yu, X. Chin, A. Li, M.F. Cho, B.J. Kwong, D.-L. Foo, P.D. Yu, M.B. Liu, X. Winkler, J. MIM capacitors using atomic-layer-deposited high-κ (HfO2)1-x(Al2O3)x dielectrics
description	10.1109/LED.2002.807703
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Hu, H. Zhu, C. Yu, X. Chin, A. Li, M.F. Cho, B.J. Kwong, D.-L. Foo, P.D. Yu, M.B. Liu, X. Winkler, J.
format	Article
author	Hu, H. Zhu, C. Yu, X. Chin, A. Li, M.F. Cho, B.J. Kwong, D.-L. Foo, P.D. Yu, M.B. Liu, X. Winkler, J.
author_sort	Hu, H.
title	MIM capacitors using atomic-layer-deposited high-κ (HfO2)1-x(Al2O3)x dielectrics
title_short	MIM capacitors using atomic-layer-deposited high-κ (HfO2)1-x(Al2O3)x dielectrics
title_full	MIM capacitors using atomic-layer-deposited high-κ (HfO2)1-x(Al2O3)x dielectrics
title_fullStr	MIM capacitors using atomic-layer-deposited high-κ (HfO2)1-x(Al2O3)x dielectrics
title_full_unstemmed	MIM capacitors using atomic-layer-deposited high-κ (HfO2)1-x(Al2O3)x dielectrics
title_sort	mim capacitors using atomic-layer-deposited high-κ (hfo2)1-x(al2o3)x dielectrics
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82701
_version_	1781784202722672640

MIM capacitors using atomic-layer-deposited high-κ (HfO2)1-x(Al2O3)x dielectrics

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