MIM capacitors using atomic-layer-deposited high-κ (HfO2)1-x(Al2O3)x dielectrics

MIM capacitors using atomic-layer-deposited high-κ (HfO2)1-x(Al2O3)x dielectrics

10.1109/LED.2002.807703

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Bibliographic Details
Main Authors: Hu, H., Zhu, C., Yu, X., Chin, A., Li, M.F., Cho, B.J., Kwong, D.-L., Foo, P.D., Yu, M.B., Liu, X., Winkler, J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Dispersion
High-κ
Metal-insulator-metal (MIM) capacitor
Thin-film devices
Voltage linearity
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82701
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Institution: National University of Singapore

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