Ni(Ge1-xSnx) ohmic contact formation on N-Type Ge1-xSnx using selenium or sulfur implant and segregation

Ni(Ge1-xSnx) ohmic contact formation on N-Type Ge1-xSnx using selenium or sulfur implant and segregation

10.1109/TED.2012.2233204

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Bibliographic Details
Main Authors: Tong, Y., Han, G., Liu, B., Yang, Y., Wang, L., Wang, W., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Nickel stanogermanide
Schottky barrier height (SBH)
segregation
selenium (Se)
sulfur (S)
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82759
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Institution: National University of Singapore
Description
Summary:10.1109/TED.2012.2233204

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