Ni(Ge1-xSnx) ohmic contact formation on N-Type Ge1-xSnx using selenium or sulfur implant and segregation
10.1109/TED.2012.2233204
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Main Authors: | Tong, Y., Han, G., Liu, B., Yang, Y., Wang, L., Wang, W., Yeo, Y.-C. |
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Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
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Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/82759 |
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Institution: | National University of Singapore |
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