Ni(Ge1-xSnx) ohmic contact formation on N-Type Ge1-xSnx using selenium or sulfur implant and segregation

10.1109/TED.2012.2233204

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Bibliographic Details
Main Authors:	Tong, Y., Han, G., Liu, B., Yang, Y., Wang, L., Wang, W., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Nickel stanogermanide Schottky barrier height (SBH) segregation selenium (Se) sulfur (S)
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82759
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82759
record_format	dspace
spelling	sg-nus-scholar.10635-827592023-10-29T22:29:28Z Ni(Ge1-xSnx) ohmic contact formation on N-Type Ge1-xSnx using selenium or sulfur implant and segregation Tong, Y. Han, G. Liu, B. Yang, Y. Wang, L. Wang, W. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Nickel stanogermanide Schottky barrier height (SBH) segregation selenium (Se) sulfur (S) 10.1109/TED.2012.2233204 IEEE Transactions on Electron Devices 60 2 746-752 IETDA 2014-10-07T04:33:10Z 2014-10-07T04:33:10Z 2013 Article Tong, Y., Han, G., Liu, B., Yang, Y., Wang, L., Wang, W., Yeo, Y.-C. (2013). Ni(Ge1-xSnx) ohmic contact formation on N-Type Ge1-xSnx using selenium or sulfur implant and segregation. IEEE Transactions on Electron Devices 60 (2) : 746-752. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2012.2233204 00189383 http://scholarbank.nus.edu.sg/handle/10635/82759 000316817900030 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Nickel stanogermanide Schottky barrier height (SBH) segregation selenium (Se) sulfur (S)
spellingShingle	Nickel stanogermanide Schottky barrier height (SBH) segregation selenium (Se) sulfur (S) Tong, Y. Han, G. Liu, B. Yang, Y. Wang, L. Wang, W. Yeo, Y.-C. Ni(Ge1-xSnx) ohmic contact formation on N-Type Ge1-xSnx using selenium or sulfur implant and segregation
description	10.1109/TED.2012.2233204
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Tong, Y. Han, G. Liu, B. Yang, Y. Wang, L. Wang, W. Yeo, Y.-C.
format	Article
author	Tong, Y. Han, G. Liu, B. Yang, Y. Wang, L. Wang, W. Yeo, Y.-C.
author_sort	Tong, Y.
title	Ni(Ge1-xSnx) ohmic contact formation on N-Type Ge1-xSnx using selenium or sulfur implant and segregation
title_short	Ni(Ge1-xSnx) ohmic contact formation on N-Type Ge1-xSnx using selenium or sulfur implant and segregation
title_full	Ni(Ge1-xSnx) ohmic contact formation on N-Type Ge1-xSnx using selenium or sulfur implant and segregation
title_fullStr	Ni(Ge1-xSnx) ohmic contact formation on N-Type Ge1-xSnx using selenium or sulfur implant and segregation
title_full_unstemmed	Ni(Ge1-xSnx) ohmic contact formation on N-Type Ge1-xSnx using selenium or sulfur implant and segregation
title_sort	ni(ge1-xsnx) ohmic contact formation on n-type ge1-xsnx using selenium or sulfur implant and segregation
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82759
_version_	1781784216417075200

Ni(Ge1-xSnx) ohmic contact formation on N-Type Ge1-xSnx using selenium or sulfur implant and segregation

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