Nickel-silicide contact technology with dual near-band-edge barrier heights and integration in CMOS FinFETs with single mask

10.1109/LED.2010.2052586

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Bibliographic Details
Main Authors:	Sinha, M., Chor, E.F., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Aluminum (Al) implant contact resistance double-species implant FinFETs nickel silicide (NiSi) Schottky barrier height sulfur (S) implant
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82762
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82762
record_format	dspace
spelling	sg-nus-scholar.10635-827622024-11-14T00:58:15Z Nickel-silicide contact technology with dual near-band-edge barrier heights and integration in CMOS FinFETs with single mask Sinha, M. Chor, E.F. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Aluminum (Al) implant contact resistance double-species implant FinFETs nickel silicide (NiSi) Schottky barrier height sulfur (S) implant 10.1109/LED.2010.2052586 IEEE Electron Device Letters 31 9 918-920 EDLED 2014-10-07T04:33:12Z 2014-10-07T04:33:12Z 2010-09 Article Sinha, M., Chor, E.F., Yeo, Y.-C. (2010-09). Nickel-silicide contact technology with dual near-band-edge barrier heights and integration in CMOS FinFETs with single mask. IEEE Electron Device Letters 31 (9) : 918-920. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2010.2052586 07413106 http://scholarbank.nus.edu.sg/handle/10635/82762 000283185500006 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Aluminum (Al) implant contact resistance double-species implant FinFETs nickel silicide (NiSi) Schottky barrier height sulfur (S) implant
spellingShingle	Aluminum (Al) implant contact resistance double-species implant FinFETs nickel silicide (NiSi) Schottky barrier height sulfur (S) implant Sinha, M. Chor, E.F. Yeo, Y.-C. Nickel-silicide contact technology with dual near-band-edge barrier heights and integration in CMOS FinFETs with single mask
description	10.1109/LED.2010.2052586
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Sinha, M. Chor, E.F. Yeo, Y.-C.
format	Article
author	Sinha, M. Chor, E.F. Yeo, Y.-C.
author_sort	Sinha, M.
title	Nickel-silicide contact technology with dual near-band-edge barrier heights and integration in CMOS FinFETs with single mask
title_short	Nickel-silicide contact technology with dual near-band-edge barrier heights and integration in CMOS FinFETs with single mask
title_full	Nickel-silicide contact technology with dual near-band-edge barrier heights and integration in CMOS FinFETs with single mask
title_fullStr	Nickel-silicide contact technology with dual near-band-edge barrier heights and integration in CMOS FinFETs with single mask
title_full_unstemmed	Nickel-silicide contact technology with dual near-band-edge barrier heights and integration in CMOS FinFETs with single mask
title_sort	nickel-silicide contact technology with dual near-band-edge barrier heights and integration in cmos finfets with single mask
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82762
_version_	1821217579309465600

Nickel-silicide contact technology with dual near-band-edge barrier heights and integration in CMOS FinFETs with single mask

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