Nickel-silicide contact technology with dual near-band-edge barrier heights and integration in CMOS FinFETs with single mask
10.1109/LED.2010.2052586
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| Main Authors: | , , |
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| Other Authors: | |
| Format: | Article |
| Published: |
2014
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| Subjects: | |
| Online Access: | http://scholarbank.nus.edu.sg/handle/10635/82762 |
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| Institution: | National University of Singapore |