Oxidation study of plasma-enhanced chemical vapor deposited and rf sputtered hydrogenated amorphous silicon carbide films

Oxidation study of plasma-enhanced chemical vapor deposited and rf sputtered hydrogenated amorphous silicon carbide films

10.1063/1.1330252

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Bibliographic Details
Main Authors: Choi, W.K., Lee, L.P., Foo, S.L., Gangadharan, S., Chong, N.B., Tan, L.S.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82856
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Institution: National University of Singapore
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Summary:10.1063/1.1330252

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