Oxidation study of plasma-enhanced chemical vapor deposited and rf sputtered hydrogenated amorphous silicon carbide films

10.1063/1.1330252

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Bibliographic Details
Main Authors:	Choi, W.K., Lee, L.P., Foo, S.L., Gangadharan, S., Chong, N.B., Tan, L.S.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82856
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82856
record_format	dspace
spelling	sg-nus-scholar.10635-828562023-10-30T08:00:56Z Oxidation study of plasma-enhanced chemical vapor deposited and rf sputtered hydrogenated amorphous silicon carbide films Choi, W.K. Lee, L.P. Foo, S.L. Gangadharan, S. Chong, N.B. Tan, L.S. ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.1330252 Journal of Applied Physics 89 3 1942-1947 JAPIA 2014-10-07T04:34:18Z 2014-10-07T04:34:18Z 2001-02-01 Article Choi, W.K., Lee, L.P., Foo, S.L., Gangadharan, S., Chong, N.B., Tan, L.S. (2001-02-01). Oxidation study of plasma-enhanced chemical vapor deposited and rf sputtered hydrogenated amorphous silicon carbide films. Journal of Applied Physics 89 (3) : 1942-1947. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1330252 00218979 http://scholarbank.nus.edu.sg/handle/10635/82856 000166644400064 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1063/1.1330252
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Choi, W.K. Lee, L.P. Foo, S.L. Gangadharan, S. Chong, N.B. Tan, L.S.
format	Article
author	Choi, W.K. Lee, L.P. Foo, S.L. Gangadharan, S. Chong, N.B. Tan, L.S.
spellingShingle	Choi, W.K. Lee, L.P. Foo, S.L. Gangadharan, S. Chong, N.B. Tan, L.S. Oxidation study of plasma-enhanced chemical vapor deposited and rf sputtered hydrogenated amorphous silicon carbide films
author_sort	Choi, W.K.
title	Oxidation study of plasma-enhanced chemical vapor deposited and rf sputtered hydrogenated amorphous silicon carbide films
title_short	Oxidation study of plasma-enhanced chemical vapor deposited and rf sputtered hydrogenated amorphous silicon carbide films
title_full	Oxidation study of plasma-enhanced chemical vapor deposited and rf sputtered hydrogenated amorphous silicon carbide films
title_fullStr	Oxidation study of plasma-enhanced chemical vapor deposited and rf sputtered hydrogenated amorphous silicon carbide films
title_full_unstemmed	Oxidation study of plasma-enhanced chemical vapor deposited and rf sputtered hydrogenated amorphous silicon carbide films
title_sort	oxidation study of plasma-enhanced chemical vapor deposited and rf sputtered hydrogenated amorphous silicon carbide films
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82856
_version_	1781784238091141120

Oxidation study of plasma-enhanced chemical vapor deposited and rf sputtered hydrogenated amorphous silicon carbide films

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