Physical model for gallium arsenide growth on germanium fins with different orientations formed on 10° offcut germanium-on-insulator substrate

Journal of Applied Physics

Saved in:

Bibliographic Details
Main Authors:	Goh, K.-H., Cheng, Y., Lu Low, K., Yu Jin Kong, E., Chia, C.-K., Toh, E.-H., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82909
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

id	sg-nus-scholar.10635-82909
record_format	dspace
spelling	sg-nus-scholar.10635-829092023-11-01T08:18:14Z Physical model for gallium arsenide growth on germanium fins with different orientations formed on 10° offcut germanium-on-insulator substrate Goh, K.-H. Cheng, Y. Lu Low, K. Yu Jin Kong, E. Chia, C.-K. Toh, E.-H. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Journal of Applied Physics 113 4 - JAPIA 2014-10-07T04:34:57Z 2014-10-07T04:34:57Z 2013-01-28 Article Goh, K.-H., Cheng, Y., Lu Low, K., Yu Jin Kong, E., Chia, C.-K., Toh, E.-H., Yeo, Y.-C. (2013-01-28). Physical model for gallium arsenide growth on germanium fins with different orientations formed on 10° offcut germanium-on-insulator substrate. Journal of Applied Physics 113 (4) : -. ScholarBank@NUS Repository. 00218979 http://scholarbank.nus.edu.sg/handle/10635/82909 000314724500103 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	Journal of Applied Physics
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Goh, K.-H. Cheng, Y. Lu Low, K. Yu Jin Kong, E. Chia, C.-K. Toh, E.-H. Yeo, Y.-C.
format	Article
author	Goh, K.-H. Cheng, Y. Lu Low, K. Yu Jin Kong, E. Chia, C.-K. Toh, E.-H. Yeo, Y.-C.
spellingShingle	Goh, K.-H. Cheng, Y. Lu Low, K. Yu Jin Kong, E. Chia, C.-K. Toh, E.-H. Yeo, Y.-C. Physical model for gallium arsenide growth on germanium fins with different orientations formed on 10° offcut germanium-on-insulator substrate
author_sort	Goh, K.-H.
title	Physical model for gallium arsenide growth on germanium fins with different orientations formed on 10° offcut germanium-on-insulator substrate
title_short	Physical model for gallium arsenide growth on germanium fins with different orientations formed on 10° offcut germanium-on-insulator substrate
title_full	Physical model for gallium arsenide growth on germanium fins with different orientations formed on 10° offcut germanium-on-insulator substrate
title_fullStr	Physical model for gallium arsenide growth on germanium fins with different orientations formed on 10° offcut germanium-on-insulator substrate
title_full_unstemmed	Physical model for gallium arsenide growth on germanium fins with different orientations formed on 10° offcut germanium-on-insulator substrate
title_sort	physical model for gallium arsenide growth on germanium fins with different orientations formed on 10° offcut germanium-on-insulator substrate
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82909
_version_	1781784250216873984

Physical model for gallium arsenide growth on germanium fins with different orientations formed on 10° offcut germanium-on-insulator substrate

Similar Items