Physical model for gallium arsenide growth on germanium fins with different orientations formed on 10° offcut germanium-on-insulator substrate

• Main Authors: Goh, K.-H., Cheng, Y., Lu Low, K., Yu Jin Kong, E., Chia, C.-K., Toh, E.-H., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82909
• Institution: National University of Singapore

Journal of Applied Physics