Process and material properties of HfLaOx prepared by atomic layer deposition

10.1149/1.2960995

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Bibliographic Details
Main Authors: He, W., Chan, D.S.H., Kim, S.-J., Kim, Y.-S., Kim, S.-T., Cho, B.J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82934
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Institution: National University of Singapore
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