PVD HfO2 for high-precision MIM capacitor applications

• Main Authors: Kim, S.J., Cho, B.J., Li, M.F., Yu, X., Zhu, C., Chin, A., Kwong, D.-L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Capacitance density; HfO2; Metal-insulator-metal (MIM) capacitor; Sputter; Voltage coefficient of capacitor (VCC)
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82950
• Institution: National University of Singapore

10.1109/LED.2003.813381