PVD HfO2 for high-precision MIM capacitor applications

PVD HfO2 for high-precision MIM capacitor applications

10.1109/LED.2003.813381

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Bibliographic Details
Main Authors:	Kim, S.J., Cho, B.J., Li, M.F., Yu, X., Zhu, C., Chin, A., Kwong, D.-L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Capacitance density HfO2 Metal-insulator-metal (MIM) capacitor Sputter Voltage coefficient of capacitor (VCC)
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82950
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Institution:	National University of Singapore

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