Source/drain engineering for In0.7Ga0.3As N-channel metal-oxide-semiconductor field-effect transistors. Raised source/drain with in situ doping for series resistance reduction
10.1143/JJAP.50.04DF01
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| Main Authors: | , , , , , , , , |
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| 格式: | Article |
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2014
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| 在線閱讀: | http://scholarbank.nus.edu.sg/handle/10635/83039 |
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| 機構: | National University of Singapore |