Spatial distribution of interface trap density in strained channel transistors using the spread of the differential capacitance characteristics in scanning capacitance microscopy measurements

10.1063/1.2721868

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Main Authors: Wong, K.M., Chim, W.K., Ang, K.W., Yeo, Y.C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83044
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-830442023-10-29T20:54:58Z Spatial distribution of interface trap density in strained channel transistors using the spread of the differential capacitance characteristics in scanning capacitance microscopy measurements Wong, K.M. Chim, W.K. Ang, K.W. Yeo, Y.C. ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.2721868 Applied Physics Letters 90 15 - APPLA 2014-10-07T04:36:36Z 2014-10-07T04:36:36Z 2007 Article Wong, K.M., Chim, W.K., Ang, K.W., Yeo, Y.C. (2007). Spatial distribution of interface trap density in strained channel transistors using the spread of the differential capacitance characteristics in scanning capacitance microscopy measurements. Applied Physics Letters 90 (15) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2721868 00036951 http://scholarbank.nus.edu.sg/handle/10635/83044 000245690700110 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1063/1.2721868
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Wong, K.M.
Chim, W.K.
Ang, K.W.
Yeo, Y.C.
format Article
author Wong, K.M.
Chim, W.K.
Ang, K.W.
Yeo, Y.C.
spellingShingle Wong, K.M.
Chim, W.K.
Ang, K.W.
Yeo, Y.C.
Spatial distribution of interface trap density in strained channel transistors using the spread of the differential capacitance characteristics in scanning capacitance microscopy measurements
author_sort Wong, K.M.
title Spatial distribution of interface trap density in strained channel transistors using the spread of the differential capacitance characteristics in scanning capacitance microscopy measurements
title_short Spatial distribution of interface trap density in strained channel transistors using the spread of the differential capacitance characteristics in scanning capacitance microscopy measurements
title_full Spatial distribution of interface trap density in strained channel transistors using the spread of the differential capacitance characteristics in scanning capacitance microscopy measurements
title_fullStr Spatial distribution of interface trap density in strained channel transistors using the spread of the differential capacitance characteristics in scanning capacitance microscopy measurements
title_full_unstemmed Spatial distribution of interface trap density in strained channel transistors using the spread of the differential capacitance characteristics in scanning capacitance microscopy measurements
title_sort spatial distribution of interface trap density in strained channel transistors using the spread of the differential capacitance characteristics in scanning capacitance microscopy measurements
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/83044
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