Spatial distribution of interface trap density in strained channel transistors using the spread of the differential capacitance characteristics in scanning capacitance microscopy measurements

10.1063/1.2721868

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Bibliographic Details
Main Authors: Wong, K.M., Chim, W.K., Ang, K.W., Yeo, Y.C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83044
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Institution: National University of Singapore