Spatial distribution of interface trap density in strained channel transistors using the spread of the differential capacitance characteristics in scanning capacitance microscopy measurements
10.1063/1.2721868
Saved in:
Main Authors: | Wong, K.M., Chim, W.K., Ang, K.W., Yeo, Y.C. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/83044 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Theoretical model of interface trap density using the spread of the differential capacitance characteristics in scanning capacitance microscopy measurements
by: Wong, K.M., et al.
Published: (2014) -
Accurate modeling of the effects of fringing area interface traps on scanning capacitance microscopy measurement
by: Hong, Y.D., et al.
Published: (2014) -
Influence of interface traps and surface mobility degradation on scanning capacitance microscopy measurement
by: Hong, Y.D., et al.
Published: (2014) -
Scanning capacitance microscopy detection of charge trapping in free-standing germanium nanodots and the passivation of hole trap sites
by: Wong, K.M., et al.
Published: (2014) -
Monitoring Oxide Quality Using the Spread of the dC/dV Peak in Scanning Capacitance Microscopy Measurements
by: Chim, W.K., et al.
Published: (2014)