Strained n-channel field-effect transistors with channel proximate silicon-carbon source/drain stressors for performance enhancement

Strained n-channel field-effect transistors with channel proximate silicon-carbon source/drain stressors for performance enhancement

10.1149/1.3493601

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Bibliographic Details
Main Authors: Koh, S.-M., Wong, H.-S., Gong, X., Ng, C.-M., Variam, N., Henry, T., Erokhin, Y., Samudra, G.S., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83078
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Institution: National University of Singapore
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Summary:10.1149/1.3493601

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