Strained n-channel field-effect transistors with channel proximate silicon-carbon source/drain stressors for performance enhancement

10.1149/1.3493601

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Bibliographic Details
Main Authors:	Koh, S.-M., Wong, H.-S., Gong, X., Ng, C.-M., Variam, N., Henry, T., Erokhin, Y., Samudra, G.S., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83078
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83078
record_format	dspace
spelling	sg-nus-scholar.10635-830782023-10-29T20:57:55Z Strained n-channel field-effect transistors with channel proximate silicon-carbon source/drain stressors for performance enhancement Koh, S.-M. Wong, H.-S. Gong, X. Ng, C.-M. Variam, N. Henry, T. Erokhin, Y. Samudra, G.S. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1149/1.3493601 Journal of the Electrochemical Society 157 12 H1088-H1094 JESOA 2014-10-07T04:37:00Z 2014-10-07T04:37:00Z 2010 Article Koh, S.-M., Wong, H.-S., Gong, X., Ng, C.-M., Variam, N., Henry, T., Erokhin, Y., Samudra, G.S., Yeo, Y.-C. (2010). Strained n-channel field-effect transistors with channel proximate silicon-carbon source/drain stressors for performance enhancement. Journal of the Electrochemical Society 157 (12) : H1088-H1094. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3493601 00134651 http://scholarbank.nus.edu.sg/handle/10635/83078 000283938300075 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1149/1.3493601
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Koh, S.-M. Wong, H.-S. Gong, X. Ng, C.-M. Variam, N. Henry, T. Erokhin, Y. Samudra, G.S. Yeo, Y.-C.
format	Article
author	Koh, S.-M. Wong, H.-S. Gong, X. Ng, C.-M. Variam, N. Henry, T. Erokhin, Y. Samudra, G.S. Yeo, Y.-C.
spellingShingle	Koh, S.-M. Wong, H.-S. Gong, X. Ng, C.-M. Variam, N. Henry, T. Erokhin, Y. Samudra, G.S. Yeo, Y.-C. Strained n-channel field-effect transistors with channel proximate silicon-carbon source/drain stressors for performance enhancement
author_sort	Koh, S.-M.
title	Strained n-channel field-effect transistors with channel proximate silicon-carbon source/drain stressors for performance enhancement
title_short	Strained n-channel field-effect transistors with channel proximate silicon-carbon source/drain stressors for performance enhancement
title_full	Strained n-channel field-effect transistors with channel proximate silicon-carbon source/drain stressors for performance enhancement
title_fullStr	Strained n-channel field-effect transistors with channel proximate silicon-carbon source/drain stressors for performance enhancement
title_full_unstemmed	Strained n-channel field-effect transistors with channel proximate silicon-carbon source/drain stressors for performance enhancement
title_sort	strained n-channel field-effect transistors with channel proximate silicon-carbon source/drain stressors for performance enhancement
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83078
_version_	1781784294561153024

Strained n-channel field-effect transistors with channel proximate silicon-carbon source/drain stressors for performance enhancement

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