Strained n-channel field-effect transistors with channel proximate silicon-carbon source/drain stressors for performance enhancement

• Main Authors: Koh, S.-M., Wong, H.-S., Gong, X., Ng, C.-M., Variam, N., Henry, T., Erokhin, Y., Samudra, G.S., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83078
• Institution: National University of Singapore

10.1149/1.3493601