Strained n-channel transistors with silicon source and drain regions and embedded silicon/germanium as strain-transfer structure

Strained n-channel transistors with silicon source and drain regions and embedded silicon/germanium as strain-transfer structure

10.1109/LED.2007.900195

Saved in:
Bibliographic Details
Main Authors: Ang, K.-W., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Electron mobility
Silicon/germanium
Strain-transfer structure (STS)
Strained n-channel field-effect transistor (n-FET)
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83080
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore
Description
Summary:10.1109/LED.2007.900195

Similar Items