Strained n-channel transistors with silicon source and drain regions and embedded silicon/germanium as strain-transfer structure

Strained n-channel transistors with silicon source and drain regions and embedded silicon/germanium as strain-transfer structure

10.1109/LED.2007.900195

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Bibliographic Details
Main Authors: Ang, K.-W., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Electron mobility
Silicon/germanium
Strain-transfer structure (STS)
Strained n-channel field-effect transistor (n-FET)
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83080
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Institution: National University of Singapore

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