Strained n-channel transistors with silicon source and drain regions and embedded silicon/germanium as strain-transfer structure

10.1109/LED.2007.900195

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Bibliographic Details
Main Authors:	Ang, K.-W., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Electron mobility Silicon/germanium Strain-transfer structure (STS) Strained n-channel field-effect transistor (n-FET)
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83080
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83080
record_format	dspace
spelling	sg-nus-scholar.10635-830802024-11-09T07:32:28Z Strained n-channel transistors with silicon source and drain regions and embedded silicon/germanium as strain-transfer structure Ang, K.-W. Tung, C.-H. Balasubramanian, N. Samudra, G.S. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Electron mobility Silicon/germanium Strain-transfer structure (STS) Strained n-channel field-effect transistor (n-FET) 10.1109/LED.2007.900195 IEEE Electron Device Letters 28 7 609-612 EDLED 2014-10-07T04:37:01Z 2014-10-07T04:37:01Z 2007-07 Article Ang, K.-W., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C. (2007-07). Strained n-channel transistors with silicon source and drain regions and embedded silicon/germanium as strain-transfer structure. IEEE Electron Device Letters 28 (7) : 609-612. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.900195 07413106 http://scholarbank.nus.edu.sg/handle/10635/83080 000247643900023 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Electron mobility Silicon/germanium Strain-transfer structure (STS) Strained n-channel field-effect transistor (n-FET)
spellingShingle	Electron mobility Silicon/germanium Strain-transfer structure (STS) Strained n-channel field-effect transistor (n-FET) Ang, K.-W. Tung, C.-H. Balasubramanian, N. Samudra, G.S. Yeo, Y.-C. Strained n-channel transistors with silicon source and drain regions and embedded silicon/germanium as strain-transfer structure
description	10.1109/LED.2007.900195
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Ang, K.-W. Tung, C.-H. Balasubramanian, N. Samudra, G.S. Yeo, Y.-C.
format	Article
author	Ang, K.-W. Tung, C.-H. Balasubramanian, N. Samudra, G.S. Yeo, Y.-C.
author_sort	Ang, K.-W.
title	Strained n-channel transistors with silicon source and drain regions and embedded silicon/germanium as strain-transfer structure
title_short	Strained n-channel transistors with silicon source and drain regions and embedded silicon/germanium as strain-transfer structure
title_full	Strained n-channel transistors with silicon source and drain regions and embedded silicon/germanium as strain-transfer structure
title_fullStr	Strained n-channel transistors with silicon source and drain regions and embedded silicon/germanium as strain-transfer structure
title_full_unstemmed	Strained n-channel transistors with silicon source and drain regions and embedded silicon/germanium as strain-transfer structure
title_sort	strained n-channel transistors with silicon source and drain regions and embedded silicon/germanium as strain-transfer structure
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83080
_version_	1821222281182969856

Strained n-channel transistors with silicon source and drain regions and embedded silicon/germanium as strain-transfer structure

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