Surface plasmon enhanced photoluminescence in gold capped InGaAs quantum well nanodisk array

Surface plasmon enhanced photoluminescence in gold capped InGaAs quantum well nanodisk array

10.1364/OME.3.002003

Saved in:

Bibliographic Details
Main Authors:	Huang, J., Tung, K.H.P., Deng, L., Xiang, N., Dong, J., Danner, A.J., Teng, J.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83126
Tags:	Add Tag No Tags, Be the first to tag this record!

Similar Items

Coupling of surface plasmon with InGaAs/GaAs quantum well emission by gold nanodisk arrays
by: Gao, H., et al.
Published: (2014)

Photoluminescence of InAs quantum dots embedded in graded InGaAs barriers
by: Yin, Z., et al.
Published: (2014)

Light-driven plasmonic color filters by overlaying photoresponsive liquid crystals on gold annular aperture arrays
by: Liu, Y.J., et al.
Published: (2014)

Plasmon-modulated photoluminescence of individual gold nanostructures
by: Hu, Hailong, et al.
Published: (2013)

Pd-InGaAs as a new self-aligned contact material on InGaAs
by: Kong, E.Y.-J., et al.
Published: (2014)

STUDY OF INTERSUBBAND TRANSITIONS IN InGaAs/GaAs QUANTUM WELLS
by: H. JAMAL MOHAMAD
Published: (2020)

Integration of InGaAs/GaAs QW with Surface Plasmon and Photonic Bandgap Structure on its PL Emission
by: GAO HONGWEI
Published: (2014)

Intermixing in strained InGaAs/GaAs quantum-well infrared photodetectors
by: Lee, A.S.W., et al.
Published: (2014)

Crystal structure and epitaxial relationship of Ni4InGaAs 2 films formed on InGaAs by annealing
by: Ivana, et al.
Published: (2014)

Thermionic emission and tunneling in InGaAs/GaAs quantum well infrared detectors
by: Karunasiri, G.
Published: (2014)

The effects of thermal annealing on the photoluminescence and DC characteristics of 1.3 µm p-doped InAs/InGaAs/GaAs quantum dot lasers
by: Zhao, Hanxue, et al.
Published: (2013)

Characteristics of InGaAs quantum dot infrared photodetectors
by: Xu, S.J., et al.
Published: (2014)

Zinc oxide nanodisk
by: Yu, M. B., et al.
Published: (2011)

A self-aligned Ni-InGaAs contact technology for InGaAs channel n-MOSFETs
by: Zhang, X., et al.
Published: (2014)

Characteristics of InGaAs quantum dot infrared photodetectors
by: Xu, S. J., et al.
Published: (2013)

Investigation of Pd-InGaAs for the formation of self-aligned source/drain contacts in InGaAs metal-oxide-semiconductor field-effect transistors
by: Kong, E.Y.-J., et al.
Published: (2014)

Impurity free vacancy disordering of InAs/GaAs quantum dot and InAs/InGaAs dot-in-a-well structures
by: Chia, C.K., et al.
Published: (2014)

Theoretical comparison of 0.78% tensile strained InGaAs/InAlGaAs and InGaAs/InGaAsP quantum-well lasers emitting at 1.55 μm
by: Khoo, Hong Khai, et al.
Published: (2014)

LOCALIZED SURFACE PLASMON RESONANCE BIOSENSOR DESIGN OPTIMIZATION WITH METALâINSULATORâMETAL NANODISK/NANORING
by: Puspaduhita, Amilla

Study of quantum phenomena in intermixed GaAs/AlGaAs and InGaAs/InGaAsP quantum well structures
by: Au Yeung, Tin Cheung.
Published: (2008)

Plasmon resonance of spherical and ellipsoidal gold particles in hexagonal-plasmonic arrays
by: Nonthanan Sitpathom, et al.
Published: (2020)

Strained GaAs/InGaAs Core-Shell Nanowires for Photovoltaic Applications
by: Moratis, K, et al.
Published: (2020)

Vacancy-enhanced intermixing in highly strained InGaAs/GaAs multiple quantum well photodetector
by: Lee, A.S.W., et al.
Published: (2014)

Effect of strain relaxation on forward bias dark currents in GaAs/InGaAs multiquantum well p-i-n diodes
by: GRIFFIN, Paul Robert, et al.
Published: (1996)

Responsivities of n-type GaAs/InGaAs/AlGaAs step multiple-quantum-well infrared detectors
by: Cheah, C.W., et al.
Published: (2014)

Investigation of dislocations and traps in MBE grown p-InGaAs/GaAs heterostructures
by: Du, A.Y., et al.
Published: (2014)

Photoluminescence via gap plasmons between single silver nanowires and a thin gold film
by: Hu, Hailong, et al.
Published: (2016)

THEORETICAL COMPARISON OF TENSILE STRAINED InGaAs/InAlGaAs AND InGaAs/InGaAsP QW LASERS EMITTING AT 1.55 ?M
by: KHOO HONG KHAI
Published: (2020)

Ultrafast modulation of exciton – plasmon coupling in a monolayer WS2 – Ag nanodisk hybrid system
by: Du, Wei, et al.
Published: (2020)

Growth of GaAs/AlGaAs quantum well lasers and GaAs/InGaAs vertical cavity surface emitting lasers by MBE
by: Li, Chaoyong.
Published: (2009)

Normal incident intersubband infrared detector using n-type InGaAs/GaAs quantum wells
by: Karunasiri, Gamani, et al.
Published: (2014)

Monolithic Fabrication of InGaAs/GaAs/AlGaAs Multiple Wavelength Quantum Well Laser Diodes via Impurity-Free Vacancy DisorderingQuantum Well Intermixing
by: Qiao, Zhongliang, et al.
Published: (2017)

Room-temperature photoluminescence, contactless electroreflectance, and X-ray characterization of a double-side delta-doped GaAlAs/InGaAs high electron mobility transistor structure
by: Huang, Y.S., et al.
Published: (2014)

Comparative investigation of photoluminescence of In- and Si- doped GaN/AlGaN multi-quantum wells
by: Sun, W.H., et al.
Published: (2014)

Study of misfit dislocations by EBIC, CL and HRTEM in GaAs/InGaAs lattice-strained multi-quantum well p-i-n solar cells
by: Mazzer, M., et al.
Published: (1996)

Selective wet etching process for Ni-InGaAs contact formation in InGaAs N-MOSFETs with self-aligned source and drain
by: Subramanian, S., et al.
Published: (2014)

Analysis of AlGaAs/GaAs/InGaAs n-type step multiple quantum wells for the optimization of normal incident absorption
by: Cheah, C.W., et al.
Published: (2014)

Optical studies on individual Au nanodisks
by: Liao, Mingyi
Published: (2014)

Tensile strained InGaAs/AlGaInAs MQW laser emitting at 1.55 μm
by: Khoo, H.K., et al.
Published: (2014)

Photoluminescence of metallic plasmonic nanostructures
by: Hu, Hailong
Published: (2013)