Ultra high-stress liner comprising diamond-like carbon for performance enhancement of p-channel multiple-gate transistors

• Main Authors: Tan, K.-M., Yang, M., Liow, T.-Y., Lee, R.T.P., Yeo, Y.-C.
• 其他作者: ELECTRICAL & COMPUTER ENGINEERING
• 格式: Article
• 出版: 2014
• 主題: Contact etch stop layer (CESL); Diamond-like carbon (DLC); FinFET; Multiple-gate; Strain
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/83239

10.1109/TED.2009.2019388