Unexpectedly high etching rate of highly doped n-type crystalline silicon in hydrofluoric acid

Unexpectedly high etching rate of highly doped n-type crystalline silicon in hydrofluoric acid

10.1149/2.026309jss

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Bibliographic Details
Main Authors:	Liu, L., Lin, F., Heinrich, M., Aberle, A.G., Hoex, B.
Other Authors:	SOLAR ENERGY RESEARCH INST OF S'PORE
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83250
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Institution:	National University of Singapore

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