Unipolar memristive switching in yttrium oxide and RESET current reduction using a yttrium interlayer
10.1149/2.008203esl
Saved in:
Main Authors: | Pi, C., Ren, Y., Liu, Z.Q., Chim, W.K. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/83251 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Thermal stability improvement of the lanthanum aluminate/silicon interface using a thin yttrium interlayer
by: Liu, Z.Q., et al.
Published: (2014) -
Investigation of yttrium oxide and silver/silver sulfide for memory resistive switching application
by: PI CAN
Published: (2012) -
Interfacial-layer-free growth of yttrium oxide on germanium by understanding initial surface reactions
by: Liu, Z.Q., et al.
Published: (2014) -
Band alignment of yttrium oxide on various relaxed and strained semiconductor substrates
by: Chiam, S.Y., et al.
Published: (2014) -
CHARACTERIZATION OF DEPOSITED YTTRIUM OXIDE FILMS
by: BHASKARAN JAYACHANDRAN
Published: (2020)