Wet etching characteristics and surface morphology evaluation of MOCVD grown HfO2 film

Wet etching characteristics and surface morphology evaluation of MOCVD grown HfO2 film

10.1016/j.tsf.2004.05.121

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Bibliographic Details
Main Authors: Balasubramanian, M., Bera, L.K., Mathew, S., Balasubramanian, N., Lim, V., Joo, M.S., Cho, B.J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Gate dielectrics
HfO2
High-K
Wet etching
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83265
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Institution: National University of Singapore
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