Wet etching characteristics and surface morphology evaluation of MOCVD grown HfO2 film

• Main Authors: Balasubramanian, M., Bera, L.K., Mathew, S., Balasubramanian, N., Lim, V., Joo, M.S., Cho, B.J.
• 其他作者: ELECTRICAL & COMPUTER ENGINEERING
• 格式: Article
• 出版: 2014
• 主題: Gate dielectrics; HfO2; High-K; Wet etching
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/83265

10.1016/j.tsf.2004.05.121