A new silane-ammonia surface passivation technology for realizing inversion-type surface-channel aAs N-MOSFET with 160 nm gate length and high-quality metal-gate/high-k dielectric stack

A new silane-ammonia surface passivation technology for realizing inversion-type surface-channel aAs N-MOSFET with 160 nm gate length and high-quality metal-gate/high-k dielectric stack

10.1109/IEDM.2008.4796700

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Bibliographic Details
Main Authors: Chin, H.-C., Zhu, M., Lee, Z.-C., Liu, X., Tan, K.-M., Lee, H.K., Shi, L., Tang, L.-J., Tung, C.-H., Lo, G.-Q., Tan, L.-S., Yeo, Y.-C.
Other Authors: DATA STORAGE INSTITUTE
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83389
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Institution: National University of Singapore
Description
Summary:10.1109/IEDM.2008.4796700

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