A new silane-ammonia surface passivation technology for realizing inversion-type surface-channel aAs N-MOSFET with 160 nm gate length and high-quality metal-gate/high-k dielectric stack

10.1109/IEDM.2008.4796700

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Main Authors:	Chin, H.-C., Zhu, M., Lee, Z.-C., Liu, X., Tan, K.-M., Lee, H.K., Shi, L., Tang, L.-J., Tung, C.-H., Lo, G.-Q., Tan, L.-S., Yeo, Y.-C.
Other Authors:	DATA STORAGE INSTITUTE
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83389
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Institution:	National University of Singapore

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spelling	sg-nus-scholar.10635-833892015-01-14T21:44:10Z A new silane-ammonia surface passivation technology for realizing inversion-type surface-channel aAs N-MOSFET with 160 nm gate length and high-quality metal-gate/high-k dielectric stack Chin, H.-C. Zhu, M. Lee, Z.-C. Liu, X. Tan, K.-M. Lee, H.K. Shi, L. Tang, L.-J. Tung, C.-H. Lo, G.-Q. Tan, L.-S. Yeo, Y.-C. DATA STORAGE INSTITUTE INSTITUTE OF MICROELECTRONICS ELECTRICAL & COMPUTER ENGINEERING 10.1109/IEDM.2008.4796700 Technical Digest - International Electron Devices Meeting, IEDM - TDIMD 2014-10-07T04:40:41Z 2014-10-07T04:40:41Z 2008 Conference Paper Chin, H.-C.,Zhu, M.,Lee, Z.-C.,Liu, X.,Tan, K.-M.,Lee, H.K.,Shi, L.,Tang, L.-J.,Tung, C.-H.,Lo, G.-Q.,Tan, L.-S.,Yeo, Y.-C. (2008). A new silane-ammonia surface passivation technology for realizing inversion-type surface-channel aAs N-MOSFET with 160 nm gate length and high-quality metal-gate/high-k dielectric stack. Technical Digest - International Electron Devices Meeting, IEDM : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/IEDM.2008.4796700" target="_blank">https://doi.org/10.1109/IEDM.2008.4796700</a> 9781424423781 01631918 http://scholarbank.nus.edu.sg/handle/10635/83389 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	10.1109/IEDM.2008.4796700
author2	DATA STORAGE INSTITUTE
author_facet	DATA STORAGE INSTITUTE Chin, H.-C. Zhu, M. Lee, Z.-C. Liu, X. Tan, K.-M. Lee, H.K. Shi, L. Tang, L.-J. Tung, C.-H. Lo, G.-Q. Tan, L.-S. Yeo, Y.-C.
format	Conference or Workshop Item
author	Chin, H.-C. Zhu, M. Lee, Z.-C. Liu, X. Tan, K.-M. Lee, H.K. Shi, L. Tang, L.-J. Tung, C.-H. Lo, G.-Q. Tan, L.-S. Yeo, Y.-C.
spellingShingle	Chin, H.-C. Zhu, M. Lee, Z.-C. Liu, X. Tan, K.-M. Lee, H.K. Shi, L. Tang, L.-J. Tung, C.-H. Lo, G.-Q. Tan, L.-S. Yeo, Y.-C. A new silane-ammonia surface passivation technology for realizing inversion-type surface-channel aAs N-MOSFET with 160 nm gate length and high-quality metal-gate/high-k dielectric stack
author_sort	Chin, H.-C.
title	A new silane-ammonia surface passivation technology for realizing inversion-type surface-channel aAs N-MOSFET with 160 nm gate length and high-quality metal-gate/high-k dielectric stack
title_short	A new silane-ammonia surface passivation technology for realizing inversion-type surface-channel aAs N-MOSFET with 160 nm gate length and high-quality metal-gate/high-k dielectric stack
title_full	A new silane-ammonia surface passivation technology for realizing inversion-type surface-channel aAs N-MOSFET with 160 nm gate length and high-quality metal-gate/high-k dielectric stack
title_fullStr	A new silane-ammonia surface passivation technology for realizing inversion-type surface-channel aAs N-MOSFET with 160 nm gate length and high-quality metal-gate/high-k dielectric stack
title_full_unstemmed	A new silane-ammonia surface passivation technology for realizing inversion-type surface-channel aAs N-MOSFET with 160 nm gate length and high-quality metal-gate/high-k dielectric stack
title_sort	new silane-ammonia surface passivation technology for realizing inversion-type surface-channel aas n-mosfet with 160 nm gate length and high-quality metal-gate/high-k dielectric stack
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83389
_version_	1681089426894094336

A new silane-ammonia surface passivation technology for realizing inversion-type surface-channel aAs N-MOSFET with 160 nm gate length and high-quality metal-gate/high-k dielectric stack

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