A Novel Approach for Integration of Dual Metal Gate Process Using Ultra Thin Aluminum Nitride Buffer Layer

Digest of Technical Papers - Symposium on VLSI Technology

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Main Authors: Park, C.S., Cho, B.J., Yan, D.A., Balasubramanian, N., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83391
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Institution: National University of Singapore
id sg-nus-scholar.10635-83391
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spelling sg-nus-scholar.10635-833912015-01-10T01:55:14Z A Novel Approach for Integration of Dual Metal Gate Process Using Ultra Thin Aluminum Nitride Buffer Layer Park, C.S. Cho, B.J. Yan, D.A. Balasubramanian, N. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING Digest of Technical Papers - Symposium on VLSI Technology 149-150 DTPTE 2014-10-07T04:40:42Z 2014-10-07T04:40:42Z 2003 Conference Paper Park, C.S.,Cho, B.J.,Yan, D.A.,Balasubramanian, N.,Kwong, D.-L. (2003). A Novel Approach for Integration of Dual Metal Gate Process Using Ultra Thin Aluminum Nitride Buffer Layer. Digest of Technical Papers - Symposium on VLSI Technology : 149-150. ScholarBank@NUS Repository. 07431562 http://scholarbank.nus.edu.sg/handle/10635/83391 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
country Singapore
collection ScholarBank@NUS
description Digest of Technical Papers - Symposium on VLSI Technology
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Park, C.S.
Cho, B.J.
Yan, D.A.
Balasubramanian, N.
Kwong, D.-L.
format Conference or Workshop Item
author Park, C.S.
Cho, B.J.
Yan, D.A.
Balasubramanian, N.
Kwong, D.-L.
spellingShingle Park, C.S.
Cho, B.J.
Yan, D.A.
Balasubramanian, N.
Kwong, D.-L.
A Novel Approach for Integration of Dual Metal Gate Process Using Ultra Thin Aluminum Nitride Buffer Layer
author_sort Park, C.S.
title A Novel Approach for Integration of Dual Metal Gate Process Using Ultra Thin Aluminum Nitride Buffer Layer
title_short A Novel Approach for Integration of Dual Metal Gate Process Using Ultra Thin Aluminum Nitride Buffer Layer
title_full A Novel Approach for Integration of Dual Metal Gate Process Using Ultra Thin Aluminum Nitride Buffer Layer
title_fullStr A Novel Approach for Integration of Dual Metal Gate Process Using Ultra Thin Aluminum Nitride Buffer Layer
title_full_unstemmed A Novel Approach for Integration of Dual Metal Gate Process Using Ultra Thin Aluminum Nitride Buffer Layer
title_sort novel approach for integration of dual metal gate process using ultra thin aluminum nitride buffer layer
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/83391
_version_ 1681089427275776000