A Novel Approach for Integration of Dual Metal Gate Process Using Ultra Thin Aluminum Nitride Buffer Layer

• Main Authors: Park, C.S., Cho, B.J., Yan, D.A., Balasubramanian, N., Kwong, D.-L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83391
• Institution: National University of Singapore

Digest of Technical Papers - Symposium on VLSI Technology