A novel program-erasable high-κ AlN capacitor with memory function

• Main Authors: Chin, A., Lai, C.H., Hung, B.F., Cheng, C.F., McAlister, S.P., Zhu, C., Li, M.-F., Kwong, D.-L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Subjects: Aln; Erase; High dielectric constant (high κ); Memory; Program; Retention
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83404
• Institution: National University of Singapore

Proceedings 2004 Non-Volatile Memory Technology Symposium, NVMTS 2004