A novel program-erasable high-κ AlN capacitor with memory function
Proceedings 2004 Non-Volatile Memory Technology Symposium, NVMTS 2004
Saved in:
Main Authors: | Chin, A., Lai, C.H., Hung, B.F., Cheng, C.F., McAlister, S.P., Zhu, C., Li, M.-F., Kwong, D.-L. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Conference or Workshop Item |
Published: |
2014
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/83404 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
A novel program-erasable high-k AlN-Si MIS capacitor
by: Lai, C.H., et al.
Published: (2014) -
Very high density RF MIM capacitors (17 fF/μm2) using high-κ Al2O3 doped Ta2O5 dielectrics
by: Yang, M.Y., et al.
Published: (2014) -
High-density MIM capacitors using AlTaOx dielectrics
by: Yang, M.Y., et al.
Published: (2014) -
High dielectric constant materials in SONOS-type non- volatile memory structures
by: TAN YAN NY
Published: (2010) -
Fabrication and characterization of a trilayer germanium nanocrystal memory device with hafnium dioxide as the tunnel dielectric
by: Ng, T.H., et al.
Published: (2014)