AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 v and a complementary metal-oxide- semiconductor compatible gold-free process

10.7567/JJAP.52.04CF06

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Bibliographic Details
Main Authors:	Liu, X., Zhan, C., Wai Chan, K., Samuel Owen, M.H., Liu, W., Chi, D.Z., Tan, L.S., Chen, K.J., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83449
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83449
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spelling	sg-nus-scholar.10635-834492024-11-08T21:38:36Z AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 v and a complementary metal-oxide- semiconductor compatible gold-free process Liu, X. Zhan, C. Wai Chan, K. Samuel Owen, M.H. Liu, W. Chi, D.Z. Tan, L.S. Chen, K.J. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.7567/JJAP.52.04CF06 Japanese Journal of Applied Physics 52 4 PART 2 - 2014-10-07T04:41:21Z 2014-10-07T04:41:21Z 2013-04 Conference Paper Liu, X., Zhan, C., Wai Chan, K., Samuel Owen, M.H., Liu, W., Chi, D.Z., Tan, L.S., Chen, K.J., Yeo, Y.-C. (2013-04). AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 v and a complementary metal-oxide- semiconductor compatible gold-free process. Japanese Journal of Applied Physics 52 (4 PART 2) : -. ScholarBank@NUS Repository. https://doi.org/10.7567/JJAP.52.04CF06 00214922 http://scholarbank.nus.edu.sg/handle/10635/83449 000320002400083 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.7567/JJAP.52.04CF06
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Liu, X. Zhan, C. Wai Chan, K. Samuel Owen, M.H. Liu, W. Chi, D.Z. Tan, L.S. Chen, K.J. Yeo, Y.-C.
format	Conference or Workshop Item
author	Liu, X. Zhan, C. Wai Chan, K. Samuel Owen, M.H. Liu, W. Chi, D.Z. Tan, L.S. Chen, K.J. Yeo, Y.-C.
spellingShingle	Liu, X. Zhan, C. Wai Chan, K. Samuel Owen, M.H. Liu, W. Chi, D.Z. Tan, L.S. Chen, K.J. Yeo, Y.-C. AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 v and a complementary metal-oxide- semiconductor compatible gold-free process
author_sort	Liu, X.
title	AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 v and a complementary metal-oxide- semiconductor compatible gold-free process
title_short	AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 v and a complementary metal-oxide- semiconductor compatible gold-free process
title_full	AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 v and a complementary metal-oxide- semiconductor compatible gold-free process
title_fullStr	AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 v and a complementary metal-oxide- semiconductor compatible gold-free process
title_full_unstemmed	AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 v and a complementary metal-oxide- semiconductor compatible gold-free process
title_sort	algan/gan metal-oxide-semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 v and a complementary metal-oxide- semiconductor compatible gold-free process
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83449
_version_	1821213375369052160

AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 v and a complementary metal-oxide- semiconductor compatible gold-free process

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