Analysis of Charge Trapping and Breakdown Mechanism in High-K Dielectrics with Metal Gate Electrode Using Carrier Separation

Technical Digest - International Electron Devices Meeting

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書目詳細資料
Main Authors: Loh, W.Y., Cho, B.C., Joo, M.S., Li, M.F., Chan, D.S.H., Mathew, S., Kwong, D.-L.
其他作者: ELECTRICAL & COMPUTER ENGINEERING
格式: Conference or Workshop Item
出版: 2014
在線閱讀:http://scholarbank.nus.edu.sg/handle/10635/83486
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機構: National University of Singapore