Beneath-the-channel Strain-Transfer-Structure (STS) and embedded source/drain stressors for strain and performance enhancement of nanoscale MOSFETs

10.1109/VLSIT.2007.4339719

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Bibliographic Details
Main Authors:	Ang, K.-W., Lin, J., Tung, C.-H., Balasubramanian, N., Samudra, G., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83511
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83511
record_format	dspace
spelling	sg-nus-scholar.10635-835112023-10-29T21:03:32Z Beneath-the-channel Strain-Transfer-Structure (STS) and embedded source/drain stressors for strain and performance enhancement of nanoscale MOSFETs Ang, K.-W. Lin, J. Tung, C.-H. Balasubramanian, N. Samudra, G. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/VLSIT.2007.4339719 Digest of Technical Papers - Symposium on VLSI Technology 42-43 DTPTE 2014-10-07T04:42:03Z 2014-10-07T04:42:03Z 2007 Conference Paper Ang, K.-W., Lin, J., Tung, C.-H., Balasubramanian, N., Samudra, G., Yeo, Y.-C. (2007). Beneath-the-channel Strain-Transfer-Structure (STS) and embedded source/drain stressors for strain and performance enhancement of nanoscale MOSFETs. Digest of Technical Papers - Symposium on VLSI Technology : 42-43. ScholarBank@NUS Repository. https://doi.org/10.1109/VLSIT.2007.4339719 07431562 http://scholarbank.nus.edu.sg/handle/10635/83511 000250539900015 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1109/VLSIT.2007.4339719
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Ang, K.-W. Lin, J. Tung, C.-H. Balasubramanian, N. Samudra, G. Yeo, Y.-C.
format	Conference or Workshop Item
author	Ang, K.-W. Lin, J. Tung, C.-H. Balasubramanian, N. Samudra, G. Yeo, Y.-C.
spellingShingle	Ang, K.-W. Lin, J. Tung, C.-H. Balasubramanian, N. Samudra, G. Yeo, Y.-C. Beneath-the-channel Strain-Transfer-Structure (STS) and embedded source/drain stressors for strain and performance enhancement of nanoscale MOSFETs
author_sort	Ang, K.-W.
title	Beneath-the-channel Strain-Transfer-Structure (STS) and embedded source/drain stressors for strain and performance enhancement of nanoscale MOSFETs
title_short	Beneath-the-channel Strain-Transfer-Structure (STS) and embedded source/drain stressors for strain and performance enhancement of nanoscale MOSFETs
title_full	Beneath-the-channel Strain-Transfer-Structure (STS) and embedded source/drain stressors for strain and performance enhancement of nanoscale MOSFETs
title_fullStr	Beneath-the-channel Strain-Transfer-Structure (STS) and embedded source/drain stressors for strain and performance enhancement of nanoscale MOSFETs
title_full_unstemmed	Beneath-the-channel Strain-Transfer-Structure (STS) and embedded source/drain stressors for strain and performance enhancement of nanoscale MOSFETs
title_sort	beneath-the-channel strain-transfer-structure (sts) and embedded source/drain stressors for strain and performance enhancement of nanoscale mosfets
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83511
_version_	1781784362818207744

Beneath-the-channel Strain-Transfer-Structure (STS) and embedded source/drain stressors for strain and performance enhancement of nanoscale MOSFETs

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